RGC Senior Research Fellow Scheme

Biography

Chair Professor in Department of Electronic and Computer Engineering at The Hong Kong University of Science and Technology
Research interests include compound semiconductor materials and devices, gallium nitride (GaN)-based microwave power transistors, high-frequency semiconductor devices, power semiconductor devices and ICs, and wide-bandgap semiconductor devices
SRFS project — aims to develop (1) heterogeneous WBG power devices to harness the complementary merits of GaN and SiC for realizing unprecedented power conversion efficiency and power density and (2) a new GaN power device technology to enhance performance and reliability for high-performance computing, industrial and automotive applications. By incorporating quantum effects in critical junctions, the new device aims to overcome challenges faced by current GaN devices
Awards and Honours:
- RGC Senior Research Fellow (2024)
- Fellow of IEEE for contributions to Compound Semiconductor Heterojunction Transistor Technology (2014)
- Distinguished Lecturer, IEEE Electron Device Society (2008~2014)

Project Title

Unlocking the Full Potential of Wide-bandgap Semiconductors through Heterogeneous Integration and Junction Engineering for Highly Efficient Power Conversion Systems

Award Citation

This fellowship is awarded to Professor Jing Chen in recognition of his fundamental and transformative contributions to wide-bandgap semiconductor electron devices and integrated circuits. Professor Chen’s pioneering work on gallium nitride (GaN) enhancement-mode transistors and power integration has paved the way for the advancement and commercialization of GaN power electronics, a key enabler for the continuous and recently accelerating electrification process of modern society. He has led the identification of important mechanisms underlying the stability and reliability challenges of GaN power switching devices, and consequently developed solutions including surface reinforcement techniques and double-channel designs. His recent work on GaN complementary logic integrated circuits has played an important role in expanding GaN’s horizon to energy-efficient functional units for logic control and gate drive.

The proposed research under this fellowship focuses on unlocking the full potential of wide-bandgap semiconductors through heterogeneous integration of GaN and silicon carbide, and a tunnel-junction control scheme. It is aimed at inspiring and developing next-generation talents to support Hong Kong’s development in the microelectronics industry.