研资局高级研究学者计划 | 教资会及研资局奖项

Biography (只提供英文版)

Chair Professor in Department of Electronic and Computer Engineering at The Hong Kong University of Science and Technology
Research interests include compound semiconductor materials and devices, gallium nitride (GaN)-based microwave power transistors, high-frequency semiconductor devices, power semiconductor devices and ICs, and wide-bandgap semiconductor devices
SRFS project — aims to develop (1) heterogeneous WBG power devices to harness the complementary merits of GaN and SiC for realizing unprecedented power conversion efficiency and power density and (2) a new GaN power device technology to enhance performance and reliability for high-performance computing, industrial and automotive applications. By incorporating quantum effects in critical junctions, the new device aims to overcome challenges faced by current GaN devices
Awards and Honours:
- RGC Senior Research Fellow (2024)
- Fellow of IEEE for contributions to Compound Semiconductor Heterojunction Transistor Technology (2014)
- Distinguished Lecturer, IEEE Electron Device Society (2008~2014)

Project Title (只提供英文版)

Unlocking the Full Potential of Wide-bandgap Semiconductors through Heterogeneous Integration and Junction Engineering for Highly Efficient Power Conversion Systems

赞词

该奖项授予陈敬教授，以表彰他对宽禁带半导体电子器件和集成电路所做出的基础性和变革性贡献。陈教授在氮化镓（GaN）增强型晶体管和功率集成方面的开创性工作为氮化镓功率电子学的推进和商业化铺平了道路，这是现代社会持续且最近加速的电气化进程的关键推动因素。他领导了对氮化镓功率开关器件稳定性和可靠性挑战的重要机制的识别及确认，并因此开发了包括表面强化技术和双通道设计在内的解决方案。近期在氮化镓互补逻辑集成电路方面的工作将氮化镓扩展到逻辑控制和门驱动的高能效功能单元方面发挥了重要作用，扩展了氮化镓积体电路的疆域。

该奖项下的拟议研究将侧重于通过氮化镓和碳化硅的异质集成以及隧道结控制方案来释放宽禁带半导体的全部潜力。其目的在于激励和培养下一代人才，以支持香港在微电子行业的发展。