Prof. Jiong ZHAO
Department of Applied Physics
The Hong Kong Polytechnic University
Biography
- Professor in Department of Applied Physics at The Hong Kong Polytechnic University
- Research interests include 2D materials, electron microscopy, nanomaterials
- RFS project — In 2D bilayer h-BN or 2D TMDs, the Moiré pattern in marginally twisted bilayers aligns with the out-of-plane ferroelectric domain pattern. The domain structures (e.g., AB or BA stacking area) can be controlled by an external electric field. This project aims to explore the dissipation, fatigue and domain switching mechanisms of these innovative vdW 2D ferroelectrics, with a specific focus on domain wall kinetics. It will consider the influence of twist angles and stacking orders. Larger twist angles or cases of incommensurate stacking may introduce low friction interlayer sliding or even superlubricity in between the layers, potentially exhibiting even lower dissipation compared to marginally twisted bilayers for domain wall motion. Moreover, the unique in-plane vortex domain structures in twisted bilayers might introduce novel domain wall dynamics and inspire the development of future device structures. The objective of this project is to minimize energy dissipation for the domain kinetics and minimize fatigue for the ferroelectric switching, with the ultimate goal of achieving ultrafast speed, minimal energy loss, fatigue-free and optimal recyclability in 2D twisting-layered ferroelectric devices.
- Awards and Honours:
- RGC Research Fellow (2025)
- NSFC Distinguished Young Scholar (2025)
- Hong Kong Academy of Engineering, Young Member Section (YMS) (2025)
Project Title
- From Slidetronics to Twistronics: A Twisting Platform for Dissipationless Ferroelectricity
Award Citation
Prof Zhao Jiong is awarded the RGC Research Fellow for his project on exploring the dissipation, fatigue and domain switching mechanisms of these innovative vdW 2D ferroelectrics, with a specific focus on domain wall kinetics.
In 2D bilayer h-BN or 2D TMDs, the Moiré pattern in marginally twisted bilayers aligns with the out-of-plane ferroelectric domain pattern. The domain structures (e.g., AB or BA stacking area) can be controlled by an external electric field. The ferroelectric domain wall motion between adjacent vdW layers enables ultrafast and robust "slidetronics" and “twistronics” with minimal charge pinning and mechanical friction, offering promising prospects for future ferroelectric devices.
This project will consider the influence of twist angles and stacking orders. Larger twist angles or cases of incommensurate stacking may introduce low friction interlayer sliding or even superlubricity in between the layers, potentially exhibiting even lower dissipation compared to marginally twisted bilayers for domain wall motion. Moreover, the unique in-plane vortex domain structures in twisted bilayers might introduce novel domain wall dynamics and inspire the development of future device structures. The objective is to minimize energy dissipation for the domain kinetics and minimize fatigue for the ferroelectric switching, with the ultimate goal of achieving ultrafast speed, minimal energy loss, fatigue-free and optimal recyclability in 2D twisting-layered ferroelectric devices.
